EC21 Product Catalogs - gaas

Offer 4 Inch GaAs Polished Wafer

20120406

Dia 4 inch Grade Prime/test Growth Method HB/VGF thickness: customization Crystal orientation: <100> <111> surface: single/double side polished no scratch, no saw mark, no chip, no stain packing Alum

RF Transistor (SiGe / GaAs D-PHEMT / GaAs E-PHEMT)

20231214

GaAs D-PHEMTApplication: DVB-S LNB, 5G small cell LNA, GPS LNA, Microwave Motion Sensor*P/N:UA2810 / UA2811*VDD(V):1.2~3.3V*IDD(mA):2 ~ 20*VGS_OFF(V):-0.35*fMAX (GHz):175*fT (GHz):115*GA @12GHz(dB):1