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<title><![CDATA[EC21 Product Catalogs - low power transistor]]></title>
<link><![CDATA[https://www.ec21.com/ec-market/low_power_transistor--100103/1/low power transistor.html]]></link><item>
<title><![CDATA[Aluminum Based Silicon Carbide Electronic Substrate]]></title><link><![CDATA[https://hygdkj.en.ec21.com/Aluminum_Based_Silicon_Carbide_Electronic--12057378_12057428.html]]></link><description><![CDATA[Transistor) modules generate a large amount of heat during operation. The AlSiC material is usually used to fabricate the IGBT substrate, and the high-power IGBT module is firmly packaged, so that th]]></description><pubDate><![CDATA[20260522]]></pubDate></item>
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<title><![CDATA[Fuji IGBT Transistor Module 7MBR30U2A060-50]]></title><link><![CDATA[https://bjsthd.en.ec21.com/Fuji_IGBT_Transistor_Module_7MBR30U2A060--9753525_9746796.html]]></link><description><![CDATA[Fuji IGBT transistor module 7MBR30U2A060-50 
Product Description 
1. Igbt Is A Functional Integration Of Power Mosfet And Bjt Devices In Monolithic Form 
2. Igbt Combines The Best Attributes Of Both ]]></description><pubDate><![CDATA[20181220]]></pubDate></item>

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