Silicon Carbide SiC Crystal Substrate Wafer Carborundum 4H 6H N Type 2inch 3inch 4inch

20171127

Homray Material Technology offers silicon carbide wafers in different grades. Standard quality wafers meet high demands for production purposes, research grade substrates are the inexpensive alterna

Monocrystalline Silicon Wafer

20240707

Production Method CZ Diameter 2inch / 3inch / 4inch/ 6inch / 8 inch Thickness 100um,200um,300um,400um,500um,600um,700um,800um,900um,1000um Type N type / P type Orientation <111> , <100>,<110> Resisti

EC21 Product Catalogs - 4inch

Silicon Carbide SiC Crystal Substrate Wafer Carborundum 4H 6H N Type 2inch 3inch 4inch

Monocrystalline Silicon Wafer