EC21 Product Catalogs - epi

Bulk GaN Substrates

20170706

Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground Cleaning/packaging Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

R/M/A-plane Sapphire Wafers

20150126

Epi-polished, Ra < 0.3 nm (by AFM) Back Surface Fine-ground, Ra =0.8 um - 1.2 um Epi-polished, Ra < 0.3 nm (by AFM) TTV ≤ 10 μm ≤ 20 μm LTV ≤ 10 μm ≤ 20 μm BOW - 10 ~ 0 μm