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Products > high efficient mixer > Yingda International Technology Co.,Ltd. | Similar Products

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high efficient mixer

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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply: high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply: high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier: high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier: high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier: Efficiency 45.0 - - % Power Flatness - 2.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -4 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply: Efficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off voltage VDS=6V IDS≤100mA -8 - -4 V Gate-source reverse Current VDS=0V VGS=-10V - - 5 uA Note:The final technical indicators and dimensions ...

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