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SiSiC Silicon Carbide Cantilever Paddle Beam Use in Semiconductor Wafer Processing

SiSiC Silicon Carbide Cantilever Paddle Beam Use in Semiconductor Wafer Processing
Silicon Carbide Cantilever paddle Beamsilicon carbide cantilever beam, is a silicon carbide ceramic roduct sintered at a high temperature of 1850°C. It is used below 1380°C. Silicon carbide paddle, ...

SiSiC Silicon Carbide Cantilever Paddle Beam Use in Semiconductor Wafer Processing

SiSiC Silicon Carbide Cantilever Paddle Beam Use in Semiconductor Wafer Processing
Silicon Carbide Cantilever paddle Beamsilicon carbide cantilever beam, is a silicon carbide ceramic roduct sintered at a high temperature of 1850°C. It is used below 1380°C. Silicon carbide paddle, ...

Refractory Silicon Carbide Ceramic Beam SISIC Beams Sic Beam

Refractory Silicon Carbide Ceramic Beam SISIC Beams Sic Beam
RBSIC/SISIC/ Sic Silicon Carbide Ceramic BeamThe material of siliconized silicon carbide has a series of basic superiority and characteristics such as high strength, extreme hardness, wear resistance ...
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