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Products > high power module > Shi Tong Hong Da (Hk) Co., Ltd | Similar Products
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high power module

" found 15 Products from Shi Tong Hong Da (Hk) Co., Ltd, China
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Fuji IGBT Transistor Module 7MBR30U2A060-50

Fuji IGBT Transistor <strong>Module</strong> 7MBR30U2A060-50
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

Semikron Igbt Skm75gb123d

Semikron Igbt Skm75gb123d
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

Rectifier Bridge KD221K75

Rectifier Bridge KD221K75
module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. 3. All components and interconnects are isolated from ...

MITSUBISHI IGBT Module PM100CVA120

MITSUBISHI IGBT <strong>Module</strong> PM100CVA120
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

Toshiba IGBT Module MG400Q1US11

Toshiba IGBT <strong>Module</strong> MG400Q1US11
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

IGBT Modules FF800R12KE3

IGBT <strong>Module</strong>s FF800R12KE3
module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. 3. All components and interconnects are isolated from ...

FUJI IGBT Modules 6MBI100S-120-50

FUJI IGBT <strong>Module</strong>s 6MBI100S-120-50
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

Thyristor Module FS100R17PE4

Thyristor <strong>Module</strong> FS100R17PE4
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

INFINEON IGBT MODULE FZ2400R17HE4_B9

INFINEON IGBT <strong>MODULE</strong> FZ2400R17HE4_B9
module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. 3. All components and interconnects are isolated from ...

PM300DSA120 Mitsubishi Power Module

PM300DSA120 Mitsubishi <strong>Power</strong> <strong>Module</strong>
module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. 3. All components and interconnects are isolated from ...

SKKQ3001/14E Semikron IGBT MODULES

SKKQ3001/14E Semikron IGBT <strong>MODULE</strong>S
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

IGBT Module CM600DU-24NF

IGBT <strong>Module</strong> CM600DU-24NF
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge ...

BSM300GB120DLC EUPEC IGBT Modules

BSM300GB120DLC EUPEC IGBT <strong>Module</strong>s
module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. 3. All components and interconnects are isolated from ...

CM1400DU-24NF IGBT Transistor

CM1400DU-24NF IGBT Transistor
Module Consists Of Two Igbt In A Half-Bridge Configuration With Each Transistor Having A Reverse-Connected Super-Fast Recovery Free-Wheel Diode. 3. All Components And Interconnects Are Isolated From ...

IGBT Transistor Module 1MBI600S-120

IGBT Transistor <strong>Module</strong> 1MBI600S-120
Power Mosfet And Bjt Devices In Monolithic Form 2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge Configuration ...
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