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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GaN HEMT GN2735P45  Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +84V wasted power(Tc=25℃) 38W Gate-source voltage Vgs -10V storage ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54  Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃,VDS=+50V) 161W Gate-source voltage Vgs -10V storage ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN0912P46  RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 29W Gate-source voltage Vgs -10V storage ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power (Tc=25℃, VDS=+50V) 140W wasted power (Tc=25℃, VDS=+28V) 12W Gate-source ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 30W Gate-source voltage Vgs -10V storage ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source voltage Vgs -10V storage ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY

GaN HEMT GN027029P54  Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
temperature -55℃~+125℃ Operating temperature -40℃~+75℃ - - Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, ...
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