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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply: source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply: source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier: source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier: source reverse Current VDS=0V VGS=-10V - 5 uA 2.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃，Continuous Wave.) Parameter Test ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier: source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply: source reverse Current VDS=0V VGS=-10V - - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY: source reverse Current VDS=0V VGS=-10V - - 5 uA Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating ...

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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply