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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GaN HEMT GN2735P45  Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +84V wasted power(Tc=25℃) 38W Gate-source voltage ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54  Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN0912P46  RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 29W Gate-source voltage ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power (Tc=25℃, VDS=+50V) 140W wasted ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 30W Gate-source voltage ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY

GaN HEMT GN027029P54  Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
customer-driven and quality-focused company and we have more than 10 years experience in this field. You can fully trust us since we have good reputation and always been 100% honest and genuine to ...
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