customized 3.0 connectors

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GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply: customized. Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating temperature -40℃~+75℃ - - Yingda is ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY: 3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power Gain - 12.4 - dB Power AddedEfficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off voltage VDS=6V IDS≤100mA -8 - -4 V Gate-source reverse ...

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GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply