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Products > easy operation，test for > Yingda International Technology Co.,Ltd. | Similar Products

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easy operation，test for

" found 7 Products from Yingda International Technology Co.,Ltd., China

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(1-7 out of 7)

GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply: Operating temperature -40℃~+75℃ - - AFTER-SALES GUARANTEE: 1.Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply: Operating temperature -40℃~+85℃ - - AFTER-SALES GUARANTEE: 1.Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier: Operating temperature -40℃~+85℃ - - AFTER-SALES GUARANTEE: 1.Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier: Operating temperature -40℃~+75℃ - - AFTER-SALES GUARANTEE: 1.Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier: Operating temperature -55℃~+85℃ - - AFTER-SALES GUARANTEE: 1.Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply: GN027031P55 series GaN Internally Matched Power Amplifier GN027031P55 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY: GN027031P55 series GaN Internally Matched Power Amplifier Covering the working frequency band:2.7~3.1GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed ...

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