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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GaN HEMT GN2735P45  Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
Unit Saturation power Freq.=2.7~3.5GHz VGS=-2.8~-3.5V VDS=+28V IDsq=30mA 44.5 - - dBm Power Gain 23.5 - - dB Power AddedEfficiency 43.0 - - % Power Flatness - 2.1 dB Pinch-off ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54  Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
Unit Saturation power Freq.=1.2GHz~1.4GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 54.0 - - dBm Power Gain 16 - - dB Power AddedEfficiency 63.0 - - % Power Flatness - 1.0 dB Pinch-off ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN0912P46  RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
Unit Saturation power Freq.=0.96 ~1.22GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 46.0 - - dBm Power Gain 20 - - dB Power AddedEfficiency 65.0 - - % Power Flatness - 0.8 dB Pinch-off ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
Unit Saturation power Freq.=1.3~1.8GHz VDS=28V VGS=-2.8~-4V IDsq=5~100mA 67.0 - - dBm Power Gain 15 - - dB Power AddedEfficiency 65.0 - - % Power Flatness - 1.8 dB Pinch-off ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
Unit Saturation power Freq.=0.8~2.0GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA Test conditions: CW 43.0 - - dBm Power Gain 9 - - dB Power AddedEfficiency 45.0 - - % Power Flatness - 2.0 dB Pinch-off ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
Unit Saturation power Freq.=2.7GHz~3.1GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power Gain - 12.4 - dB Power AddedEfficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY

GaN HEMT GN027029P54  Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
Unit Saturation power Freq.=2.7GHz~3.1GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power Gain - 12.4 - dB Power AddedEfficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off ...
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