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Products > high quality limit switch > Yingda International Technology Co.,Ltd. | Similar Products

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high quality limit switch

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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply: higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +84V wasted power（Tc=25℃) 38W Gate-source voltage Vgs -10V storage ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply: higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power（Tc=25℃，VDS=+50V) 161W Gate-source voltage Vgs -10V storage ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier: higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 29W Gate-source voltage Vgs -10V storage ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier: higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power (Tc=25℃， VDS=+50V) 140W wasted power (Tc=25℃， VDS=+28V) 12W Gate-source ...

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