Search Advanced Search
Products > high voltage power module > Yingda International Technology Co.,Ltd. | Similar Products
Your search for "

high voltage power module

" found 7 Products from Yingda International Technology Co.,Ltd., China

(1-7 out of 7)

GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GaN HEMT GN2735P45  Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54  Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
power Freq.=1.2GHz~1.4GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 54.0 - - dBm Power Gain 16 - - dB Power AddedEfficiency 63.0 - - % Power Flatness - 1.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN0912P46  RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
power Freq.=0.96 ~1.22GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 46.0 - - dBm Power Gain 20 - - dB Power AddedEfficiency 65.0 - - % Power Flatness - 0.8 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
power Freq.=1.3~1.8GHz VDS=28V VGS=-2.8~-4V IDsq=5~100mA 15.0 - - dBm Power Gain 16 - - dB Power AddedEfficiency 15.0 - - % Power Flatness - 3.00 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
power Freq.=0.8~2.0GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA Test conditions: CW 43.0 - - dBm Power Gain 9 - - dB Power AddedEfficiency 45.0 - - % Power Flatness - 2.0 dB Pinch-off ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
power Freq.=2.7GHz~3.1GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power Gain - 12.4 - dB Power AddedEfficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY

GaN HEMT GN027029P54  Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...
Page 1 of 11
Go to Page Go

Browse: Manufacturer Directory Premium Suppliers Site Map

About EC21 Contact Us Terms & Conditions Report Item Online Trading Risks Product Listing Policy

Copyright (c)1997-2025 EC21 Inc. All Rights Reserved. EC21 in KoreanChinese

Business Registry Number: 120-86-03931 | Mall order sales Registration Number: 강남-5838

Inquiry Basket ()