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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GaN HEMT GN2735P45  Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54  Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
pulse width:200us,10% duty cycle.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=1.2GHz~1.4GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 54.0 - - dBm Power ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN0912P46  RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
pulse width:200us,10% duty cycle.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=0.96 ~1.22GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 46.0 - - dBm Power ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Electrical performance table: 1.Working ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
GN0820P43 series GaN Internally Matched Power Amplifier GN0820P43 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
pulse width:100us,10% duty cycle. Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=2.7GHz~3.1GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY

GaN HEMT GN027029P54  Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in ...
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