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Products > power diode > Yingda International Technology Co.,Ltd. | Similar Products

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GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier: Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive , Medical , Agricultural , Consumer electronics grade components. We provide all electronic components that exist. Yingda has ...

GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply: Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive , Medical , Agricultural , Consumer electronics grade components. We provide all electronic components that exist. Yingda has ...

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply: Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive , Medical , Agricultural , Consumer electronics grade components. We provide all electronic components that exist. Yingda has ...

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier: Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive , Medical , Agricultural , Consumer electronics grade components. We provide all electronic components that exist. Yingda has ...

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier: Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive , Medical , Agricultural , Consumer electronics grade components. We provide all electronic components that exist. Yingda has ...

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply: power specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source voltage Vgs -10V storage ...

GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY: power Freq.=2.7GHz~3.1GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power Gain - 12.4 - dB Power AddedEfficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off ...

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GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier