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sensor with 85db

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GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54  Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
dB Power AddedEfficiency 63.0 - - % Power Flatness - 1.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and ...

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN0912P46  RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
dB Power AddedEfficiency 65.0 - - % Power Flatness - 0.8 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and ...
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