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TEO2 Crystals: TeO2 is a kind of acousto-optic material with high quality factor. It has good properties of birefringence and optical rotation with low velocity of propagation along (110) axis.Under the same clear ...

KTP Crystal: 2.65pm/V and 10.7pm/V respectively for d31、d32、d33. The nonlinear coefficient of d31 is more than 20 times higher than that of KDP’s d36. KTP crystal, with high light damage threshold, can be ...

LITAO3(LT) Optical Crystals: 2、space groups:R3C 　　3、lattice parameter：a = 5.154 ? c = 13.783 ? 　　4、melting point：1650℃ 　　5、density：7.45 g /cm3 　　6、Curie temperature：610℃ 　　7、Moh's hardness：5.5～6 　　8、coefficient of thermal ...

LINBO3(LN) Crystal: 2、space groups:Ｃ３６（R3C）　　3、melting point: 1260℃ 　　4、Moh's hardness：～4.8 　　5、density：4.46g/cm3 　　6、coefficient of thermal expansion: 16.7（∥a）　2（∥a）　　7、Optical transparency ...

Patterned Sapphire Substrates: Crystal Material 99,996% of Al2O3,High Purity, Monocrystalline, Al2O3 Crystal quality Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent Diameter 2 ...

GaN Templates,GaN Wafers: Item GaN-T-N Diameter 2 inch 50.8±1mm Thickness 15 μm, 20 μm, 30 μm, 40 μm Orientation C-axis(0001) ± 0.5° Primary flat length 16.0±1.0mm Substrate ...

Bulk GaN Substrates: Crystal Material Free-Standing GaN Substrates Diameter 2 inch 10.0mm×10.5mm 50.8±1mm Thickness 350 ± 25 μm Rank 300,350,400 Orientation C-axis(0001) ± 0.5° Primary ...

Silicon Wafers, Silicon Substrates: Crystal Material Silicon Growth Method CZ or FZ Diameter 2 inch 4 inch 6 inch 50.8± 0.1mm 100±0.2mm 150.0±0.2 ...

Sapphire Substrates Wafers: Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GaN for LED's Crystal Material 99,996% of Al2O3,High Purity, Monocrystalline, Al2O3 Crystal ...

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