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Patterned Sapphire Substrates: μm; Depth: 1.6 ± 0.15 μm Thickness 430±25µm Orientation C- plane (0001) to M-plane (1-100) 0.2°±0.1° Primary flat Orientation A-plane (1 1-2 0 ) ± ...

Bulk GaN Substrates: Crystal Material Free-Standing GaN Substrates Diameter 2 inch 10.0mm×10.5mm 50.8±1mm Thickness 350 ± 25 μm Rank 300,350,400 Orientation C-axis(0001) ± 0.5° Primary ...

Sapphire Substrates Wafers: Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GaN for LED's Crystal Material 99,996% of Al2O3,High Purity, Monocrystalline, Al2O3 Crystal ...

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Patterned Sapphire Substrates