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Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT)
ZKHK IGBT Transistors are designed to provide robust, reliable, and efficient performance in a wide range of applications. These transistors feature low on-state voltage drop, low switching losses, ...

High Frequency Triode

High Frequency Triode
frequency can also be used in industrial applications, such as power supplies and magnetrons, where their operation requires precise and precise control of their output. High Frequency Triodes are ...

High Frequency Diode

High Frequency Diode
diode at high frequency are designed for use in applications where fast switching and low noise are critical. They operate at high frequencies, typically in the GHz range, and are commonly used for ...

2sc6104

2sc6104
Features Of 2SC6104 NPN bipolar junction transistor High-power RF transistor designed for use in RF and microwave power amplifier circuits High back pressure triode designed to operate with high ...

2sc5299

2sc5299
Features Of 2SC5299 NPN bipolar junction transistor Designed for high-power RF amplifier applications in the VHF/UHF frequency range High back pressure triode designed to operate with high levels of ...

2sc5047

2sc5047
Features Of 2SC5047 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back pressure triode designed to operate with high levels of back ...

2sc3550

2sc3550
Features Of 2SC3550 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back pressure triode designed to operate with high levels of back ...

2sc3058

2sc3058
Features Of 2SC3058 NPN bipolar junction transistor High power RF transistor, commonly used in RF power amplifier circuits for mobile phones High back pressure triode designed to operate with high ...
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