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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Efficiency 43.0 - - % Power Flatness - 2.1 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +84V wasted

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Efficiency 63.0 - - % Power Flatness - 1.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Efficiency 65.0 - - % Power Flatness - 0.8 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted

[Related Keywords : Power Amplifier, Gallium Nitride Diode GaN, RF Microwave chips, Communication Chips]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Efficiency 15.0 - - % Power Flatness - 3.00 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wast

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave chips, Communication chips, ic parts supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
- Place of origin:
  China
Efficiency 45.0 - - % Power Flatness - 2.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -4 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted pow

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Optical chip, Communication chips, 100% new original parts]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
- Supply Ability:
  100000PCS/MONTH
Efficiency 54.5 - - % Power Flatness - - 0.7 dB Pinch-off voltage VDS=6V IDS≤100mA -8 - -4 V Gate-source reverse Current VDS=0V VGS=-10V - - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +120V wasted

[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

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Korea B2C Shopping

High Efficient Mixer Wholesale

GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply

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