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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +84V wasted power（Tc=25℃) 38W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating temperature -

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power（Tc=25℃，VDS=+50V) 161W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 29W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating temperature -4

[Related Keywords : Power Amplifier, Gallium Nitride Diode GaN, RF Microwave chips, Communication Chips]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
reverse Current VDS=0V VGS=-10V - 5 uA 2.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃，Continuous Wave.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=1.3~1.8GHz VDS=28V VGS=-2.8~-4V IDsq=5~100mA 15.0 - - dBm Power Gain 16 - - dB Power AddedEfficiency 15.0 - - % Power Flatness - 3.00 dB Pinch-off voltage VDS=6V ID

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave chips, Communication chips, ic parts supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
- Place of origin:
  China
reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 30W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating temperature -5

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Optical chip, Communication chips, 100% new original parts]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
- Supply Ability:
  100000PCS/MONTH
reverse Current VDS=0V VGS=-10V - - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating temperature

[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
- Supply Ability:
  100000PCS/MONTH
reverse Current VDS=0V VGS=-10V - - 5 uA Working limit parameter: Source-drain voltage Vds +120V wasted power(Tc=25℃) 239W Gate-source voltage Vgs -10V storage temperature -55℃~+125℃ Operating temperature -40℃~+75℃ - - Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of

[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

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