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Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
GN12735P45 series GaN Internally Matched Power Amplifier Covering the working frequency band:2.7~3.5GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package GN2735P45 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power
[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
GN1214P54 series GaN Internally Matched Power Amplifier Covering the working frequency band:1.2GHz ~1.4GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package GN1214P54 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated po
[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
GN0912P46 series GaN Internally Matched Power Amplifier Covering the working frequency band:0.96 ~1.22GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package GN0912P46 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated pow
[Related Keywords : Power Amplifier, Gallium Nitride Diode GaN, RF Microwave chips, Communication Chips]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
GN013018P48 series GaN Internally Matched Power Amplifier Covering the working frequency band:1.3~1.8GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package GN013018P48 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated po
[Related Keywords : Gallium Nitride Diode GaN, RF Microwave chips, Communication chips, ic parts supply]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Place of origin:
China
GN0820P43 series GaN Internally Matched Power Amplifier GN0820P43 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Covering the working frequency band:0.8~2.0GHz Good 50
[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Optical chip, Communication chips, 100% new original parts]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
Supply Ability:
100000PCS/MONTH
GN027031P55 series GaN Internally Matched Power Amplifier GN027031P55 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Covering the working frequency band:2.7~3.1GHz Goo
[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
Supply Ability:
100000PCS/MONTH
GN027031P55 series GaN Internally Matched Power Amplifier Covering the working frequency band:2.7~3.1GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package GN027031P55 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated po
[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
1
Price:
USD 528
Place of origin:
India
Price Condition:
FOB
The DIGITAL-ANALOG LAB is intended for elementary as well as advance training of Digital & Analog electronics. The trainer covers regular digital & analog circuits by solder-less interconnections on breadboard and as well as compatible with all optional modules, through use of 2mm brass terminals and patch cords. Various clock generators, logic level input/output indicators and DC regulated power
[Related Keywords : Digital- Analog Lab]
Business Type
Manufacturer
Location
Rajasthan, India
Employees Total
11 - 50
Annual Revenue
USD 500,001 - 1,000,000
Competitive electronics pulse module products from various electronics pulse module manufacturers and electronics pulse module suppliers are listed above, please select quality and cheap items for you.
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