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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Flatness - 2.1 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +84V wasted power（Tc=25℃) 38W Gate-s

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Flatness - 1.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power（Tc=25℃，VDS=+50V

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Flatness - 0.8 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 29W Gate-so

[Related Keywords : Power Amplifier, Gallium Nitride Diode GaN, RF Microwave chips, Communication Chips]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
Flatness - 1.8 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA 2.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃，Continuous Wave.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=1.3~1.8GHz VDS=28V VGS=-2.8~-4V IDsq=5~100mA 15.0 - - dBm Power Gain 16 - - dB Power

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave chips, Communication chips, ic parts supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
- Place of origin:
  China
Flatness - 2.0 dB Pinch-off voltage VDS=6V IDS≤100mA -5 - -4 V Gate-source reverse Current VDS=0V VGS=-10V - 5 uA Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similarpower specifications,higher efficiency and wider bandwidth can be customized. Working limit parameter: Source-drain voltage Vds +100V wasted power(Tc=25℃) 30W Gate-source

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Optical chip, Communication chips, 100% new original parts]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

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Flatting Agent Wholesale

GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

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Flatting Agent Wholesale

GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply

GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply

GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier

GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier

GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier

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