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GaN HEMT GN2735P45 Gallium Nitride Diode RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
radar frequency bands,and provides the best power and gain performance in 50Ω system. Electrical performance table: 1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=2.7~3.5GHz VGS=-2.8~-3.5V VDS=+28V IDsq=30mA 44.5 - - dBm Power Gain 23.5 - - dB Power AddedEfficiency 43

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN1214P54 Gallium Nitride Diode GaN HEMT RF Microwave Chips, Communication Chips IC Parts Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
radar frequency bands,and provides the best power and gain performance in 50Ω system. Electrical performance table: 1.Working conditions:50Ω test system,VDS=+50V,IDS=50mA.((Typical test conditions: TA = +25℃，pulse width:200us,10% duty cycle.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=1.2GHz~1.4GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 54.0 - - dBm Power Ga

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0912P46 RF Microwave Chips, Communication Chips Gallium Nitride Diode GaN HEMT Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
radar frequency bands,and provides the best power and gain performance in 50Ω system. Electrical performance table: 1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃，pulse width:200us,10% duty cycle.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=0.96 ~1.22GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA 46.0 - - dBm Power Ga

[Related Keywords : Power Amplifier, Gallium Nitride Diode GaN, RF Microwave chips, Communication Chips]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN013018P48 Electronic Components Supplier RF Microwave Optical Communication Chips Power Amplifier
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
radar frequency bands,and provides the best power and gain performance in 50Ω system. Electrical performance table: 1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃，pulse width:100us,10% duty cycle.) Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=1.3~1.8GHz VDS=28V VGS=-2.8~-4V IDsq=5~100mA 67.0 - - dBm Power Gain 1

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave chips, Communication chips, ic parts supply]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GN0820P43 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips IC Parts Supplier
- Place of origin:
  China
GN0820P43 series GaN Internally Matched Power Amplifier GN0820P43 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Covering the working frequency band:0.8~2.0GHz Good 50

[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Optical chip, Communication chips, 100% new original parts]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
- Supply Ability:
  100000PCS/MONTH
GN027031P55 series GaN Internally Matched Power Amplifier GN027031P55 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Covering the working frequency band:2.7~3.1GHz Goo

[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
GaN HEMT GN027029P54 Gallium Nitride High Electron Mobility Transistor GaN HEMT IC SUPPLY
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
- Supply Ability:
  100000PCS/MONTH
radar frequency bands,and provides the best power and gain performance in 50Ω system. Electrical performance table: Working conditions:50Ω test system,TA=+25℃,VDS=+50V,IDS=70mA,pulse width:100us,10% duty cycle. Parameter Test Conditions Minimum Typically maximum Unit Saturation power Freq.=2.7GHz~3.1GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA 55.2 - - dBm Power Gain - 12.4 - dB Power AddedEfficienc

[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

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