Place of origin:
Germany
Supply Ability:
500
rectifier, IGBT transistor, DC/DC converts,.GTR
Description
1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBT in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
3. All com
[Related Keywords : INFINEON, IGBT MODULE, EUPEC, FZ2400R17HE4_B9]