Place of origin:
Japan
Supply Ability:
10000
Module Consists Of Two Igbt In A Half-Bridge Configuration With Each Transistor Having A Reverse-Connected Super-Fast Recovery Free-Wheel Diode.
3. All Components And Interconnects Are Isolated From The Heat Sinking Base Plate,Offering Simplified System Assembly.
Feature
1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function (3 Times Rated Current)
4. Igbt Is Three-Termi
[Related Keywords : Fuji IGBT module, Fuji IGBT, Transistor MODULE, IGBT Transistor]