Place of origin:
Japan
Supply Ability:
1000PCS
FS100R17PE4 Thyristor Module
Product Description
1. Igbt Is A Functional Integration Of Power Mosfet And Bjt Devices In Monolithic Form
2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge Configuration With Each Transistor Having A Reverse-Connected Super-Fast Recovery Free-Wheel Diode.
3. All Components And
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