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  • 2sc6104

    • Place of origin:  

      China

    Features Of 2SC6104 NPN bipolar junction transistor High-power RF transistor designed for use in RF and microwave power amplifier circuits High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency Rated for a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current (IC) of 12A Designed for use at high fr

    [Related Keywords : electronic components dis]

  • 2sc5299

    • Place of origin:  

      China

    Features Of 2SC5299 NPN bipolar junction transistor Designed for high-power RF amplifier applications in the VHF/UHF frequency range High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency Rated for a maximum collector-emitter voltage (VCEO) of 400V and a maximum collector current (IC) of 15A High current gain with low input

    [Related Keywords : electronic component supp]

  • 2sc5047

    • Place of origin:  

      China

    Features Of 2SC5047 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency Rated for a maximum collector-emitter voltage (VCEO) of 250V and a maximum collector current (IC) of 5A High current gain with low input impedanc

    [Related Keywords : electronic component comp]

  • 2sc3550

    • Place of origin:  

      China

    Features Of 2SC3550 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency Rated for a maximum collector-emitter voltage (VCEO) of 60V and a maximum collector current (IC) of 15A High current gain with low input impedanc

    [Related Keywords : electronic parts manufact]

  • 2sc3058

    • Place of origin:  

      China

    Features Of 2SC3058 NPN bipolar junction transistor High power RF transistor, commonly used in RF power amplifier circuits for mobile phones High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA Low-level input impedan

    [Related Keywords : electronic component chin]

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