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Min. Order:
1 Piece
Price:
US$ 1
Place of origin:
Germany
material: PVC Conductor cross-section: 0.14 mm2 Circuit protection: A, B, D 8) 9) 10) Protection class: III Weight: 170 g Polarisation filter: - AS-Interface-Chip: - Housing material: ABS/PC, Plastic Optics material: PMMA Enclosure rating: IP 67 Items supplied: Stainless steel mounting bracket (1.4301/304) BEF-W100-A Ambient operating temperature: -25 °C ... 55 °C Ambient storage temperature: -
[Related Keywords : GSE6-P1111, G6 GSE6-P1111, SICK GSE6-P1111, Photoelectric Sensors]
Business Type
Supplier
Location
Hubei, China
Employees Total
51 - 100
Annual Revenue
USD 100,000 - 500,000
Place of origin:
Korea
Material CASE : PC, Lens Cover : PC * non - glossy and white paper Model Suffix code Description P PS : Photo Sensor Small size / PW : Photo Sensor Small Wice Type Detection T Through Beam Type M Retro reflection Type R Diffuse reflection Type S Convergent Beam Type D Distance Convergent Beam Type Sensing distance 1 Through Beam 1 m 7 7 m 10 10 m 2 Retro reflection 2 m 7 Diffuse reflection 70 mm
[Related Keywords : sensor, photo sensor, photo]
Business Type
Manufacturer
Location
Incheon, Korea
Employees Total
101 - 500
Annual Revenue
USD 500,001 - 1,000,000
Min. Order:
100EA
Place of origin:
Korea
Price Condition:
FOB
Listing Description Hybrid UV Sensor : Single Supply Voltage Operation Voltage Output High Sensitivity and Good Solar Blindness Small and Compact Detailed Description Feature - AlGaInN-based Schottky photodiode - Built-in PCB with TIA circuit - Window material : Quartz - Good visible blindness - High reliability - Hermetic package Specification - Operating temp : -30 ~ 85°C (-22
Business Type
Manufacturer
Location
Daejeon, Korea
Employees Total
11 - 50
Annual Revenue
USD 2,000,001 - 5,000,000
Place of origin:
China
The C330S/RS058 is an infrared opto-electronic device sensitive to radiation in the 7.7μm ~ 9.5μm spectral band. It includes a high sensitivity focal plane array (FPA) comprised of a 320×256 element two dimensional detector array made of photovoltaic (PV) TypeⅡ InAs/GaSb superlattice (T2SL)sensitive material connected to a Silicon readout integrate circuit (ROIC) by indium bump technology, a
[Related Keywords : T2SL Detector, Thermal Imaging, Infrared Detector, Stirling cooler]
Business Type
Manufacturer
Location
Hubei, China
Employees Total
101 - 500
Annual Revenue
USD 5,000,001 - 10,000,0000
Place of origin:
Germany
Supply Ability:
3000
material Silicon Carbide (SiC) SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV de-tectors. The SiC detectors can be permanently operated at up to 170℃ (338℉). The temperature coefficient of signal (responsivity) is
[Related Keywords : UV Photodiode, UV Sensor, SiC, Sensor]
Business Type
Supplier
Employees Total
51 - 100
Annual Revenue
USD 100,000 - 500,000
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