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Place of origin:
Korea
Large Active Area InGaAs PIN PD Chip Specification Overview Large Active Area InGaAs PIN Photodiode Chips having various diameters of 275um, 1mm, 2mm, 3mm are designed to have a good linearity up to High Power. In addition, by designing their shot noise and Jonson noise current to be lowered, it makes users to reduce minimum detectable signal, it can be used for Optical Power Meter with wide rang
[Related Keywords : photodiode]
Business Type
Manufacturer
Location
Gwangju, Korea
Employees Total
101 - 500
Annual Revenue
USD 50,000,001 - 100,000,000
Place of origin:
Korea
Large Active Area InGaAs PIN PD TO-CAN Specification Overview Large Active Area InGaAs PIN PD TO-CAN Features Optical Power Monitoring Receiver System Low Dark Current and High Responsivity Commercial TO Package and Flat Window Cap Large PD Active Area : 1, 2, 3mm Application Optical Sensor Module Optical Power Monitoring Receiver System
[Related Keywords : photodiode parts]
Business Type
Manufacturer
Location
Gwangju, Korea
Employees Total
101 - 500
Annual Revenue
USD 50,000,001 - 100,000,000
Place of origin:
Korea
APD Module for OTDR Specification Overview Avalanche Photodiode Module for OTDR Features InGaAs/InP avalanche photodiode High gain and Low dark current Wide wavelngth range High reliability -40 to +85℃ operation Application OTDR Optical sensor Optical test instruments
[Related Keywords : photodiode parts]
Business Type
Manufacturer
Location
Gwangju, Korea
Employees Total
101 - 500
Annual Revenue
USD 50,000,001 - 100,000,000
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