Min. Order:
2 Piece
Price:
US$ 10
Place of origin:
Japan
Supply Ability:
500
transistors, semiconductor, power semiconductors, IGBT inverter, welding machine module, thyristor module, diode module, power module, controlled silicon, bridge rectifier, IGBT transistor, DC/DC converts,.GTR
Description
1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
2. IGBT combines the best attributes of both to achieve optimal device characteristics.
[Related Keywords : PM100RSE120, Mitsubishi Power Module, Mitsubishi, Power Module]