Min. Order:
25pcs
Price:
USD 1
Place of origin:
China
Price Condition:
FOB
Crystal Material Free-Standing GaN Substrates Diameter 2 inch 10.0mm×10.5mm 50.8±1mm Thickness 350 ± 25 μm Rank 300,350,400 Orientation C-axis(0001) ± 0.5° Primary flat length 16.0±1.0mm TTV ≤15µm ≤15µm BOW ≤20µm ≤20µm Conduction Type N-type Resistivity(300K) < 0.5 Ω·cm Dislocation Density Less than 5x105 cm
[Related Keywords : freestanding GaN wafers, GaN substrates, GaN WAFERS, Bulk GaN substrate]
Business Type
Manufacturer
Location
Henan, China
Employees Total
11 - 50
Annual Revenue
Less than USD 100,000
Place of origin:
China
power equipment. The SiC base gallium nitride (GAN-on-sic) epitaxial wafer grown on semi-insulated SiC substrate can be further made into microwave radio frequency devices. Microwave radio frequency devices are the basic components of signal sending and receiving and the core of wireless communication, mainly including radio frequency switches, LNA, power amplifiers, filters and other devices.
[Related Keywords : SiC Wafer Manufacturer, SiC Substrate Supplier]
Business Type
Manufacturer
Location
Jiangsu, China
Employees Total
51 - 100
Annual Revenue
USD 10,000,001 - 50,000,000
Min. Order:
10 Piece
Price:
US$ 0.1
Place of origin:
China
GN1214P54 series GaN Internally Matched Power Amplifier Covering the working frequency band:1.2GHz ~1.4GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package GN1214P54 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated po
[Related Keywords : Gallium Nitride Diode GaN, RF Microwave Chips, Communication Chips, IC Parts Supply]
Business Type
Supplier
Location
Guangdong, China
Employees Total
6 - 10
Annual Revenue
USD 100,000 - 500,000
Min. Order:
1 Liter
Price:
US$ 11.5 ~ 15.5
Place of origin:
China
GaN, AlN), stainless steel, aluminum magnesium alloy and compound crystal etc. Applications: Silicon carbide substrate, Sapphire · LED material, Stainless steel, Optical glass & crystal, Aluminum nitride heat sink substrate, Optical communication Features: 1. Uniform spherical SiO2 particles. 2. High removal rate and stable polishing performance. 3. Precision polishing quality with Ra<0.2nm
[Related Keywords : CMP slurry, SO polishing slurry, grinding liquid, polising grinding slurry]
Business Type
Manufacturer
Location
Beijing, China
Employees Total
101 - 500
Annual Revenue
USD 1,000,001 - 2,000,000
Place of origin:
China
GaN lattice. Thermal matching and lattice matching are conducive to the good combination of the chip and the substrate during the preparation of high-power LED, which is the guarantee of high-performance high-power LED. ( 3 ) The energy gap width of AlN ceramics is 6.2eV, and the insulation is good. When applied to high-power LEDs, it does not need insulation treatment, which simplifies the proce
[Related Keywords : Industrial Ceramic Parts]
Business Type
Manufacturer
Location
Jiangsu, China
Employees Total
101 - 500
Annual Revenue
USD 1,000,001 - 2,000,000
Place of origin:
China
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were studied using metalorganic chemical vapor deposition for high breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be realized by changing the ferrocene flo
[Related Keywords : GaN Epitaxial Wafer]
Business Type
Manufacturer
Location
shanghai, China
Employees Total
101 - 500
Annual Revenue
USD 1,000,001 - 2,000,000
Min. Order:
20 Piece
Price:
US$ 9.8
Place of origin:
China
Supply Ability:
1,000 pieces per Month
substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.Applications: Growth substrate for III-V and II-VI compounds Electronics and optoelectronics IR applications Silicon On Sapphire Integrated Circuit(SOS) Radio Frequency
[Related Keywords : Ground Sapphire Wafers, Sapphire Glass Wafers, Polished Sapphire Windows, Sapphire Windows]
Business Type
Supplier
Location
Jilin, China
Employees Total
11 - 50
Annual Revenue
USD 100,000 - 500,000
Video
Min. Order:
1 Meter
Price:
US$ 4500~4900
Place of origin:
China
Supply Ability:
1set
substrates. Its alkaline etching process has the advantages of cost-saving and easy control. Wet Chemical Etching MachineWatch the video to learn what wet etching isCustomize your EquipmentCheck out our Wet Processing Equipment.Select the product you are interested in, to find all your possible options.Then contact your sales rep to get moving on your new piece of equipment.If no products catch y
[Related Keywords : PCB Etching Machine, Chemical Etching Machine, Etching Machine, Metal Etching Machine]
Business Type
Manufacturer
Location
Guangdong, China
Employees Total
101 - 500
Annual Revenue
Less than USD 100,000
Competitive gan substrates products from various gan substrates manufacturers and gan substrates suppliers are listed above, please select quality and cheap items for you.
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