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gan substrates gan substrates : 19 Products found from 8 Suppliers & Manufacturers

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Bulk GaN Substrates
- Min. Order:
  25pcs
- Price:
  USD 1
- Place of origin:
  China
- Price Condition:
  FOB
Crystal Material Free-Standing GaN Substrates Diameter 2 inch 10.0mm×10.5mm 50.8±1mm Thickness 350 ± 25 μm Rank 300,350,400 Orientation C-axis(0001) ± 0.5° Primary flat length 16.0±1.0mm TTV ≤15µm ≤15µm BOW ≤20µm ≤20µm Conduction Type N-type Resistivity(300K) < 0.5 Ω·cm Dislocation Density Less than 5x105 cm

[Related Keywords : freestanding GaN wafers, GaN substrates, GaN WAFERS, Bulk GaN substrate]
- Jiaozuo Commercial FineWin Co., Ltd
- Business Type
  Manufacturer
- Location
  Henan, China
- Employees Total
  11 - 50
- Annual Revenue
  Less than USD 100,000
Contact Now Start Order
3 related Products from this Supplier
8 Inch SiC Wafer Manufacturer D Grade Low Cost
- Place of origin:
  China
power equipment. The SiC base gallium nitride (GAN-on-sic) epitaxial wafer grown on semi-insulated SiC substrate can be further made into microwave radio frequency devices. Microwave radio frequency devices are the basic components of signal sending and receiving and the core of wireless communication, mainly including radio frequency switches, LNA, power amplifiers, filters and other devices.

[Related Keywords : SiC Wafer Manufacturer, SiC Substrate Supplier]
- Homray Material Technology Co.,Ltd
- Business Type
  Manufacturer
- Location
  Jiangsu, China
- Employees Total
  51 - 100
- Annual Revenue
  USD 10,000,001 - 50,000,000
Contact Now Start Order
4 related Products from this Supplier
GaN HEMT GN027031P55 Series GaN Internally Matched Power Amplifier Electronic Components Supply
- Min. Order:
  10 Piece
- Price:
  US$ 0.1
- Place of origin:
  China
- Supply Ability:
  100000PCS/MONTH
GN027031P55 series GaN Internally Matched Power Amplifier GN027031P55 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Covering the working frequency band:2.7~3.1GHz Goo

[Related Keywords : electronic components, ic parts supply, Gallium Nitride Diode GaN, RF Microwave Optical]
- Yingda International Technology Co.,Ltd.
- Business Type
  Supplier
- Location
  Guangdong, China
- Employees Total
  6 - 10
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order
7 related Products from this Supplier
2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
- Place of origin:
  China
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were studied using metalorganic chemical vapor deposition for high breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be realized by changing the ferrocene flo

[Related Keywords : GaN Epitaxial Wafer]
- Shanghai GaNova Electronic Information Co., Ltd.
- Business Type
  Manufacturer
- Location
  shanghai, China
- Employees Total
  101 - 500
- Annual Revenue
  USD 1,000,001 - 2,000,000
Contact Now Start Order
Polished or Ground Sapphire Glass Wafers Sapphire Windows
- Min. Order:
  20 Piece
- Price:
  US$ 9.8
- Place of origin:
  China
- Supply Ability:
  1,000 pieces per Month
substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.Applications: Growth substrate for III-V and II-VI compounds Electronics and optoelectronics IR applications Silicon On Sapphire Integrated Circuit(SOS) Radio Frequency

[Related Keywords : Ground Sapphire Wafers, Sapphire Glass Wafers, Polished Sapphire Windows, Sapphire Windows]
- Worldhawk Optics
- Business Type
  Supplier
- Location
  Jilin, China
- Employees Total
  11 - 50
- Annual Revenue
  USD 100,000 - 500,000
Contact Now Start Order

CMP Polishing Slurry FInal Polishing Liquid
- Min. Order:
  1 Liter
- Price:
  US$ 11.5 ~ 15.5
- Place of origin:
  China
GaN, AlN), stainless steel, aluminum magnesium alloy and compound crystal etc. Applications: Silicon carbide substrate, Sapphire · LED material, Stainless steel, Optical glass & crystal, Aluminum nitride heat sink substrate, Optical communication Features: 1. Uniform spherical SiO2 particles. 2. High removal rate and stable polishing performance. 3. Precision polishing quality with Ra<0.2nm

[Related Keywords : CMP slurry, SO polishing slurry, grinding liquid, polising grinding slurry]
- Beijing Grish Hitech Co., Ltd.
- Business Type
  Manufacturer
- Location
  Beijing, China
- Employees Total
  101 - 500
- Annual Revenue
  USD 1,000,001 - 2,000,000
Contact Now Start Order
Video
Wet Metal Chemical Etching Machine and PCB Etching Machine
- Min. Order:
  1 Meter
- Price:
  US$ 4500~4900
- Place of origin:
  China
- Supply Ability:
  1set
substrates. Its alkaline etching process has the advantages of cost-saving and easy control. Wet Chemical Etching MachineWatch the video to learn what wet etching isCustomize your EquipmentCheck out our Wet Processing Equipment.Select the product you are interested in, to find all your possible options.Then contact your sales rep to get moving on your new piece of equipment.If no products catch y

[Related Keywords : PCB Etching Machine, Chemical Etching Machine, Etching Machine, Metal Etching Machine]
- Shenzhen Xinxin Precision Equipment Co., Ltd.
- Business Type
  Manufacturer
- Location
  Guangdong, China
- Employees Total
  101 - 500
- Annual Revenue
  Less than USD 100,000
Contact Now Start Order
White Industrial Ceramic Parts Heat Conduction and Heat Dissipation Insulation High Brightness LED
- Place of origin:
  China
GaN lattice. Thermal matching and lattice matching are conducive to the good combination of the chip and the substrate during the preparation of high-power LED, which is the guarantee of high-performance high-power LED. ( 3 ) The energy gap width of AlN ceramics is 6.2eV, and the insulation is good. When applied to high-power LEDs, it does not need insulation treatment, which simplifies the proce

[Related Keywords : Industrial Ceramic Parts]
- yixing haiyu refractory co.,ltd
- Business Type
  Manufacturer
- Location
  Jiangsu, China
- Employees Total
  101 - 500
- Annual Revenue
  USD 1,000,001 - 2,000,000
Contact Now Start Order

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