Place of origin:
China
Supply Ability:
1000pcs
thyristor module, diode module, power module, controlled silicon, bridge rectifier, IGBT transistor, DC/DC converts,.GTR
Description
1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBT in a half-bridge configuration with each transistor hav
[Related Keywords : Rectifier Bridge, KD221K75, IGBT MODULE]