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2 Inch As-cut SiC Wafers Manufacturer for Grinding Wheel No Lapping
HMT provide no lapping 2 inch As cut SiC wafer for grinding wheel , abrasives, newest polishing technololy testing etc. The diameter of 2 inch raw cut SiC wafer is 50.8mm, dopant is N Nitrogen. We have differenct thickness for customers choice. 1200um 1100um 900um 600um etc. We offer best price of unpolished SiCWafer on ther market including 2 inch 4 inch 6 inch and 8inch.
SiC substrate is divided according to resistivity: semi-insulating SiC substrate: refers to the SiC substrate with resistivity higher than 105 ω ·cm, which is mainly used to manufacture gallium nitride microwave rf devices. Microwave radio frequency devices are basic components in the field of wireless communication. China is vigorously developing 5G technology to release the demand for SiC substrates.

| Registration Date | 2015/01/19(Year/Month/Date) |
|---|---|
| Buyer / Seller in EC21 | Seller |
| Business Type | Manufacturer |
| Year established | 2009 |
| Employees total | 51 - 100 |
| Annual revenue | USD 10,000,001 - 50,000,000 |
| Company | Homray Material Technology Co.,Ltd |
|---|---|
| Address | LiSheng Industrial Building,60 Suli RoadSuzhouJiangsuChina |
| Phone | 86 - 0512 - 67078567 |
| Contact | Tina Chang |