Silicon Carbide SiC Crystal Substrate Wafer Carborundum 4H 6H N Type 2inch 3inch 4inch

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Supplier Info.

Company Name Homray Material Technology Co.,Ltd
Membership Free member
Registration Date2015.01.19
Country/RegionChina
CitySuzhou
Contact Tina Chang(Ms.)

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Product Attributes

- Place of Origin China
- Related Keywords SiC Crystal Substrate, Silicon Carbide wafer manufacturer

Description by Manufacturer

Homray Material Technology offers silicon carbide wafers in different grades.
Standard quality wafers meet high demands for production purposes, research grade substrates are the inexpensive alternative for research and development and for process trials.

The major products are 2 inch, 3 inch, 4 inch silicon carbide single crystal substrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other。
light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source. SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity,
The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond

Place of Origin: China (Mainland)
Brand Name: Homray Material Technology
Grade：Production Grade/Research Grade/Dummy Grade
Type: 4H-N/6H-N 4/6H-SI
Size:2/3/4/6
Application: semiconductor

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Price US$ 1 / Piece

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Silicon Carbide SiC Crystal Substrate Wafer Carborundum 4H 6H N Type 2inch 3inch 4inch

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Company Profile

About Homray Material Technology Co.,Ltd

Membership Free member
Registration Date2015.01.19
Country/RegionChina
CitySuzhou
Contact Tina Chang(Ms.)

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

Buying Categories

- Other Electronic Components >> Electronic Components & Supplies

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- Electronic Components & Supplies >> Electronic Accessories & Supplies

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Epoxy resin lapping carrier

Registration Date	2015/01/19(Year/Month/Date)
Buyer / Seller in EC21	Seller
Business Type	Manufacturer
Year established	2009
Employees total	51 - 100
Annual revenue	USD 10,000,001 - 50,000,000

Contact Information Order Credit Report

Company	Homray Material Technology Co.,Ltd
Address	LiSheng Industrial Building,60 Suli RoadSuzhouJiangsuChina
Phone	86 - 0512 - 67078567
Contact	Tina Chang

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Silicon Carbide SiC Crystal Substrate Wafer Carborundum 4H 6H N Type 2inch 3inch 4inch

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