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Photodiode

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5 1
Photo Diode HL-302QD06-QE

  • US$ 20
  • 1 Box (Min.Order)
  • Place of origin : China

HL-302QD06-QE Infrared receiving tube with a diameter of 3mm and an angle of 30 degrees. The photodiode PHOTODIODE receives infrared light. The product quality is stable and the reliability is good.

5 1
Photo Diode HL-508GD05-QE

  • US$ 20
  • 1 Box (Min.Order)
  • Place of origin : China

HL-508GD05-QE Infrared receiving tube with a diameter of 5mm and an angle of 30 degrees. Photodiode receives infrared light. The product has stable quality and good performance.

5 1
LRF(LASER RangeFinder) Receiver

  • Place of origin : Korea

LRF(LASER RangeFinder) Receiver Specification Overview The Model WDR110 LRF(LASER RangeFinder) Receiver is released to be used for laser rangefinding and surveying. The InGaAs APD provides eye-safety...

5 1
Large Active Area InGaAs PIN PD Chip

  • Place of origin : Korea

Large Active Area InGaAs PIN PD Chip Specification Overview Large Active Area InGaAs PIN Photodiode Chips having various diameters of 275um, 1mm, 2mm, 3mm are designed to have a good linearity up to...

5 1
Quadrant Photodiode (QPD) TO-CAN

  • Place of origin : Korea

Quadrant Photodiode (QPD) TO-CAN Specification Overview Quadrant Photodiode (QPD) TO-CAN Features InGaAs/InP Photodiode 800nm ~ 1700nm Spectral Response High Sensitivity Low Crosstalk High Shunt...

5 1
SPAD Without TEC

  • Place of origin : Korea

SPAD without TEC Specification Overview SPAD(Single Photon Avalanche Diode) Features InGaAs/InP Geiger-Mode Avalanche Photodiode Optimized for 1000 to 1600nm Wavelength 10MHz~1GHz Gating Frequency...

5 1
Photodiode - 56Gbaud PIN TIA ROSA

  • Place of origin : Korea

56Gbaud PIN TIA ROSA Specification Overview 56Gbaud PIN TIA RO Features InGaAs/InP PIN Photodiode TIA : AGC for Optimization VGC Function to Control TIA Output Amplitude TO-46 Package and LC...

5 1
Optical Sensor

  • Place of origin : Korea

CHARACTERISTICS (Ta=25°C unless otherwise noted) V BR Reverse Breakdown Voltage @IR=100uA, Min35 V I D Reverse Dark Current @VR=10V, Typ2, Max10nA I L Light Current 5mW/cm²@380nm VR=5V, Typ...

5 1
LD(Laser Diode) / PD(Photo-diode)

Features Our firmproduce and sell assembling devices/equipmentsfor the core parts of semiconductors such as LD, PD, APD etc. In an optical communication system uses an optical fiber cable (Cable) as...

5 1
2.5Gbps PIN-TIA module

Photodiode bias voltage* VBR - 3.3 5 V Transimpedance ZT RL=50Ω measured differenctially, AC coupled 2.5 3.5 4.5 KΩ 3dB Bandwidth f3dB Pin=-10dBm 1.7 2.1 2.6 GHz Low frequency...

5 1
2.5Gbps APD-TIA module

Photodiode bias voltage VAPD VBR V Operating case temperature range Tc -40 to +85 °C Storage temperature range TSTG -40 to +85 °C Application Diagram Precautions for Use ESD protection is...

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