Purity: Si 99.999% min. Resistity: 0.2 ohm/cm min. Type: both Single Crystal Silicon Target and Poly Crystal Silicon Targets can be supplied.
Purity:2N5，3N5 Density:7.15g/cm3 Specification:As Requested Processing Method:HIP
Purity:3N5 Min. Density:19.3g/cm3 Standard:ASTMB760 ,GB/T3875-83 Specification:As Requested Melting Point:3410°C
Purity Processing Method Roughness Specification Density Tolerance 2N5min. Forged 1.6μm As requested 6.5g/cm3 ±0.1-0.2mm
Purity Density Standard Roughness Specification Processing Method 3N5 min. 16.6g/cm3 ASTM B708 RO5200 0.8μm As Requested Rotary Swaging
Purity Density Standard Specification Melting Point 3N5 min. 16.6g/cm3 ASTM B708-98 As Requested 2996°C
Processing Method Density Standard Specification Melting Point Punched 4.5g/cm3 GB/T16598-1996 As Requested 1668°C
Purity Density Standard Specification Processing Method 99.93% min. 10.2g/cm3 GB/T3876-83 As Requested Crossover Rolling
Purity Processing Method Standard Specification Density 3N5 min. Swaging GB4187-84 As Requested 19.3 g/cm3
Purity Density Specification Surface Condition 3N5 min. 19.3 g/cm3 As Requested Polished & Annealed
