Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate

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Price

US$ 36

Min Order Quantity20 Piece
Supply Ability10000Pieces/per Month
Delivery Lead Time35days
Payment Terms 7
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* Date last updated : 2025.10.20

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Supplier Info.

Company Name Henan Hanyin Optoelectronics Technology Co., Ltd
Membership TradeVerify
Registration Date2025.06.30
Country/RegionChina
CityLuoyang
Contact Simon Hu(Mr.)

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Product Attributes

- Place of Origin China
- Supply Type OEM Service
- Condition New
- Related Keywords Electronic Substrate, composite materials, IGBT Base Plate, electronic packaging

Description by Manufacturer

Aluminum Silicon Carbide IGBT Base Plate Description

AlSiC was first used in the US radar chip substrate to replace tungsten copper. After the replacement, the heat dissipation effect is excellent, and the overall weight loss of the radar is 10 kg, which makes the aluminum-silicon carbide material attract attention.

High-current IGBT (Insulated Gate Bipolar Transistor) modules generate a large amount of heat during operation. The AlSiC material is usually used to fabricate the IGBT substrate, and the high-power IGBT module is firmly packaged, so that the chip can be used in vibration, high temperature and dust. The Aluminum Silicon Carbide IGBT Base Plate is very light, only has a 1/3 weight of the copper, but its bending strength is as good as the steel. This makes it excellent in seismic performance, exceeding the copper substrate.

Therefore, in high-power electronic packaging, Aluminum Silicon Carbide IGBT Base Plates are irreplaceable materials due to their unique combination of high thermal conductivity, low thermal expansion coefficient, and flexural strength.

Aluminum Silicon Carbide IGBT Base Plate Specification

Silicon Carbide	volume fraction 65 %
Density （g/cm³）	3.01
Elastic Modulus （GPa）	215±5
Bending Strength （MPa）	380
Tensile Strength （MPa	270
Coefficient of Thermal Expansion （10-6/K）	7.5±1
Thermal Conductivity （W/m·K)	210±10

Aluminum Silicon Carbide Base Applications

-Electronic component thermal management
-High-precision machinery
-Aerospace industry -Household appliances
-Transportation
-Power engineering
-Renewable energy
-Smart grid
-Traffic control
-Power conversion
-Industrial motors
-Power supplies
-Wind and solar equipment
-Frequency converters for automatic control

Price

Price US$ 36 / Piece

Packaging & Shipping

- PackingCarton or Wooden Crate
- Delivery Lead Time35days
- Minimum Order 20 Piece
- Supply Ability10000Pieces/per Month
- Total quantity in StockOver 5000
- Shipping Career

Product Image

Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate

Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate 2

Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate 3

Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate 4

Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate 5

Electronic Substrate Related Products

Main Export Markets

- Henan Hanyin Optoelectronics Technology Co., Ltd is mainly exporting to Asia, Europe, North America, South America, Australia, Africa

Company Profile

About Henan Hanyin Optoelectronics Technology Co., Ltd

Membership
Registration Date2025.06.30
Country/RegionChina
CityLuoyang
Contact Simon Hu(Mr.)

Henan Hanyin Optoelectronics Technology Co., Ltd. was registered on July 1, 2020, with a registered capital of 60 million yuan, and its address is located in the Optoelectronic Industry Park, Yichuan County, Luoyang City. The company mainly produces Aluminum Silicon Carbide (AlSiC) metal matrix composites, with large specifications, high performance, high thermal conductivity, lightweight properties, low expansion and other characteristics,is for aviation, aerospace, energy, electronics, transportation, medical and other fields, research and development, production and sales of new materials integration of science and technology enterprises.
Our experts and engineers are committed to delivering the solutions with the high performance, high CTE (coefficient of thermal expansion), high thermal conductivity and sustainable competitive advantages toÂ replace aluminum, copper, steel, titanium and cast iron components across a broad range of industries.
Our team is dedicated to providing unwavering service to our customers while staying at the forefront of technologies essential to their success.. Our goal is to build a reputation of resolving intricate challenges through innovative material solutions, thus empowering our clients with enhanced performance and technological advancement.

Selling Categories

- Electronic Components & Supplies >> Electronic Products & Components Processing
- Hardware >> Abrasives
- Manufacturing & Processing Machinery >> Metal Processing Machinery
- Minerals & Metallurgy >> Alloy
- Minerals & Metallurgy >> Refractory

Keywords

Aluminum Silicon Carbide , Metal Matrix Composite , Ceramic Material , Ceramic Substrate

Registration Date	2025/06/30(Year/Month/Date)
Buyer / Seller in EC21	Seller
Business Type	Manufacturer
Year established	2020
Employees total	11 - 50
Annual revenue	USD 2,000,001 - 5,000,000

Contact Information Order Credit Report

Company	Henan Hanyin Optoelectronics Technology Co., Ltd
Address	Baisha Town Optoelectronic New Materials Industrial ParkLuoyangHenan471300China
Phone	86 - 0379 - 62221168
Homepage	www.hnhanyin.com
Contact	Simon Hu

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Electronic Substrate,AlSiC IGBT Base Plate,Ceramic Substrate,Heat Sinks,Al-SiC IGBT Base Plate

Product Attributes

Description by Manufacturer

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Packaging & Shipping

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Main Export Markets

Company Profile

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